FFPF10UP20S rev. a, april 2004 ?2004 fairchild semiconductor corporation ultrafast rectifier absolute maximum ratings t c =25 c unless otherwise noted thermal characteristics electrical characteristics t c =25 c unless otherwise noted * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter value units v rrm peak repetitive reverse voltage 200 v i f(av) average rectified forward current @ t c = 100 c10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case 4.3 c/w symbol parameter min. typ. max. units v fm * maximum instantaneous forward voltage i f = 10a i f = 10a t c = 25 c t c = 100 c - - - - 1.1 1.15 v i rm * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 100 c - - - - 100 500 a t rr i rr q rr reverse recovery time reverse recovery current reverse recovery charge (i f =10a, di/dt = 200a/ s) - - - 32 1.65 26.4 - - - ns a nc t rr maximum reverse recovery time (i f =1a, di/dt = 100a/ s) - - 35 ns w avl avalanche energy (l=40mh) 5 - - mj FFPF10UP20S features ? ultrafast with soft recovery (@ i f = 1a), < 35ns ? reverse voltage, 200v ? forward voltage (@ t c = 100 c), < 1v ? enhanced avalanche energy applications ? power switching circuits ? output rectifiers ? freewheeling diodes ? switching mode power supply 1 2 to-220f-2l 1. cathode 2. anode
rev. a, april 2004 FFPF10UP20S ?2004 fairchild semiconductor corporation typical characteristics figure 1. typical forward voltage drop vs. forward current figure 3. typical junction capacitance figure 5. typical reverse recovery current vs. di/dt figure 2. typical reverse current vs. reverse voltage figure 4. typical reverse recovery time vs. di/dt figure 6. forward current derating curve 0.1 1 10 50 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0.1 1 10 100 50 100 150 typical capacitance at 0v = 141.46 pf capacitance , cj [pf] reverse voltage , v r [v] 100 500 0 1 2 3 4 5 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 0 50 100 150 200 0.001 1e-3 0.01 0.1 1 10 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 100 500 20 25 30 35 40 i f = 10a tc = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 dc average forward current , i f(av) [a] case temperature , t c [ o c]
FFPF10UP20S ?2004 fairchild semiconductor corporation rev. a, april 2004 package dimensions dimensions in millimeters to-220f-2l 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45 ) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05
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